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MSKSEMI BSS138PSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
BSS138PS
LCSC Part #
C7379944
Packaging
SOT-363
Customer #
Key Attributes
MOSFET N-CH ARR 55V 0.3A SOT-363
Datasheetpdf iconMSKSEMI BSS138PS
In-Stock: 2,980
2,980 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0351$ 0.70
200+$ 0.0274$ 5.48
600+$ 0.0231$ 13.86
3,000+$ 0.0205$ 61.50
9,000+$ 0.0183$ 164.70
21,000+$ 0.017$ 357.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-363
Drain to Source Voltage55V
Current - Continuous Drain(Id)300mA
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation280mW
Reverse Transfer Capacitance (Crss@Vds)5.5pF
RDS(on)1.2Ω@10V
Number2 N-Channel
Input Capacitance(Ciss)30.6pF
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

TP65H150G4LSG is a 650V, 150mΩ GaN FET in a normally-off configuration. It combines advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, delivering superior reliability and performance. The 4th-generation SuperGaN platform leverages advanced epitaxy and proprietary design techniques to streamline the manufacturing process, while improving efficiency over silicon devices by reducing gate charge, output capacitance, crossover losses, and reverse recovery charge.

Features

AI Translation
  • 55V, 0.3A, RDS(ON) = 1.2Ω@VGS = 10V
  • Improved dv/dt capability
  • Fast switching
  • Green Device Available
  • G - S ESD Protection Diode Embedded
  • ESD protected up to 2KV

Applications

AI Translation
  • Motor Drive
  • Power Tools
  • LED Lighting