The SMJ4416 is a high-speed, 65,536-bit, dynamic random-access memory organized as 16,384 words of 4 bits each. It employs state-of-the-art SMOS (scaled MOS) N-channel double-level polysilicon gate technology for very high performance combined with low cost and improved reliability.
The SMJ4416 features RAS access times to 150 ns maximum. Power dissipation is 200 mW typical operating, 17.5 mW typical standby.
SMoS technology permits operation from a single 5-V supply, reducing system power supply and decoupling requirements, and easing board layout. IDD peaks have been reduced to 60 mA typical, and a - 1 V input voltage undershoot can be tolerated, minimizing system noise considerations. Input clamp diodes are used to ease system design.
Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS in order to retain data. CAS can remain high during the refresh sequence to conserve power. All inputs and outputs, including clocks, are compatible with Series 54/74 TTL. All address lines and data in are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility. The SMJ4416 is offered in 18-pin 300-mil ceramic side-braze dual-in-line package. It is available in - 55 °C to 100 °C and 0 °C to 70 °C temperature ranges. Dual-in-line packages are designed for insertion in mounting hole rows on 7.62 mm (300-mil) centers.
TI SMJ4416-15JDL