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onsemi MC1413BDR2G product image
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onsemi MC1413BDR2GRoHS

Manufacturer
MPN
MC1413BDR2G
LCSC Part #
C7289
Packaging
SOIC-16
Customer #
Key Attributes
High Voltage, High Current Darlington Transistor Arrays
Datasheetpdf icononsemi MC1413BDR2G
In-Stock: 9,610
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QtyUnit PriceTotal Amount
5+$ 0.3626$ 0.3590$ 1.80
50+$ 0.2832$ 0.2804$ 14.02
150+$ 0.2492$ 0.2468$ 37.02
500+$ 0.1642$ 0.1626$ 81.30
2,500+$ 0.1454$ 0.1440$ 360.00
5,000+$ 0.134$ 0.1327$ 663.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufactureronsemi
PackagingSOIC-16
Output Leakage Current(Icex)50uA
Input Capacitiance(Ci)15pF
number of channelsSeven channels
Input Current(on)1.35mA
Vce Saturation(VCE(sat))1.1V
typeBJT
Voltage - Input(Max)30V
Voltage - Forward(Vf)1.5V
Input Current(off)100uA
Current - Collector(Ic)500mA
Operating Temperature-40℃~+85℃

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The MC1413, B with a 2.7 kΩ series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic.

Features

AI Translation
  • Pb-Free Packages are Available
  • NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes