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VISHAY IRFI620GPBF
| Manufacturer | |
| MPN | IRFI620GPBF |
| LCSC Part # | C727841 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 4.1A TO-220F |
| Datasheet |  VISHAY IRFI620GPBF |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 4.1A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 800mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 260pF | |
| Gate Charge(Qg) | 14nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
Third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
Features
- Isolated package
- High voltage Isolation = 2.5 kV RMS (t = 60 s; f = 60 Hz) COMPLIANT
- Sink to lead creepage distance = 4.8 mm
- Dynamic dV/dt rating
- Low thermal resistance
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7627 | $ 0.76 |
| 10+ | $ 0.6848 | $ 6.85 |
| 30+ | $ 0.641 | $ 19.23 |
| 100+ | $ 0.5923 | $ 59.23 |
| 500+ | $ 0.5712 | $ 285.60 |
| 1,000+ | $ 0.5615 | $ 561.50 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 4.1A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 800mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 260pF | |
| Gate Charge(Qg) | 14nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
Third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
Features
- Isolated package
- High voltage Isolation = 2.5 kV RMS (t = 60 s; f = 60 Hz) COMPLIANT
- Sink to lead creepage distance = 4.8 mm
- Dynamic dV/dt rating
- Low thermal resistance
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |