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VISHAY SI3590DV-T1-GE3 product image
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VISHAY SI3590DV-T1-GE3RoHS

Manufacturer
VISHAY
MPN
SI3590DV-T1-GE3
LCSC Part #
C727549
Packaging
TSOP-6
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 30V 3A TSOP-6
Datasheetpdf iconVISHAY SI3590DV-T1-GE3
In-Stock: 4,722
4,722 In stock, ships now
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Minimum: 1Multiple: 1Sales Unit: Piece
QtyUnit PriceTotal Amount
1+$ 0.5854$ 0.59
10+$ 0.5171$ 5.17
30+$ 0.483$ 14.49
100+$ 0.4488$ 44.88
500+$ 0.4293$ 214.65
1,000+$ 0.4196$ 419.60
Standard Packaging3000/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
PackagingTSOP-6
Current - Continuous Drain(Id)3A
RDS(on)120mΩ@2.5V
Pd - Power Dissipation830mW
Gate Threshold Voltage (Vgs(th))600mV
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)3nC@4.5V
Vgs±12V
Operating Temperature-55℃~+150℃
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Features

AI Translation
  • TrenchFET power MOSFET
  • Ultra low RDS(on) n- and p-channel for high efficiency
  • Optimized for high side / low side
  • Minimized conduction losses
  • RoHS COMPLIANT HALOGEN FREE Available

Applications

AI Translation
  • Portable devices including PDAs, cellular phones, and pagers