VISHAY SQ3989EV-T1_GE3
| Manufacturer | |
| MPN | SQ3989EV-T1_GE3 |
| LCSC Part # | C727417 |
| Packaging | TSOP-6 |
| Customer # | |
| Key Attributes | MOSFET P-CH ARR 30V 2.5A TSOP-6 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | TSOP-6 | |
| Current - Continuous Drain(Id) | 2.5A | |
| RDS(on) | 155mΩ@10V | |
| Pd - Power Dissipation | 560mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11.1nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | TSOP-6 | |
| Current - Continuous Drain(Id) | 2.5A | |
| RDS(on) | 155mΩ@10V | |
| Pd - Power Dissipation | 560mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11.1nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET power MOSFET
- AEC-Q101 qualified
- 100 % Rg and UIS tested
In-Stock: 127
127 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0512 | $ 1.05 |
| 10+ | $ 1.0349 | $ 10.35 |
| 30+ | $ 1.0252 | $ 30.76 |
| 100+ | $ 1.0154 | $ 101.54 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | TSOP-6 | |
| Current - Continuous Drain(Id) | 2.5A | |
| RDS(on) | 155mΩ@10V | |
| Pd - Power Dissipation | 560mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11.1nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | TSOP-6 | |
| Current - Continuous Drain(Id) | 2.5A | |
| RDS(on) | 155mΩ@10V | |
| Pd - Power Dissipation | 560mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11.1nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET power MOSFET
- AEC-Q101 qualified
- 100 % Rg and UIS tested
C727417 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

