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VISHAY SIP32431DNP3-T1GE4 product image
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VISHAY SIP32431DNP3-T1GE4RoHS

Manufacturer
MPN
SIP32431DNP3-T1GE4
LCSC Part #
C727398
Packaging
TDFN-4-EP(1.2x1.6)
Customer #
Key Attributes
10 pA, Ultra Low Leakage and Quiescent Current, Load Switch with Reverse Blocking
Datasheetpdf iconVISHAY SIP32431DNP3-T1GE4

Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Power Distribution Switches, Load Drivers
ManufacturerVISHAY
PackagingTDFN-4-EP(1.2x1.6)
Operating Temperature-40℃~+85℃
FeaturesReverse current blocking;Reverse voltage protection
Maximum Continuous Current1.4A
Control Input LogicActive High
RDS(on)105mΩ
Operating Voltage1.5V~5.5V
TypeHigh Side Switch

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The SiP32431 and SiP32432 are ultra low leakage and quiescent current slew rate controlled high side switches with reverse blocking capability. The switches are of a low on resistance p-channel MOSFET that supports continuous current up to 1.4 A. The SiP32431 and SiP32432 operate with an input voltage from 1.5 V to 5.5 V. The SiP32431 and SiP32432 feature low input logic level to interface with low control voltage from microprocessors. The SiP32431 is of logic high enable control, while SiP32432 is of logic low enable control. Both devices have a very low operating current, typically 10 pA at 3.3 V power supply. The SiP32431 and SiP32432 are available in lead (Pb)-free package options including 6 pin SC-70-6, and 4 pin TDFN4 1.2 mm x 1.6 mm DFN4 packages. The operation temperature range is specified from -40 °C to +85 °C. The SiP32431 and SiP32432 compact package options, operation voltage range, and low operating current make it a good fit for battery power applications.

The SiP32431 and SiP32432 are p-channel MOSFET power switches designed for high-side slew rate controlled load-switching applications. Once turned on, the slew-rate control circuitry is activated and current is ramped in a linear fashion until it reaches the level required for the output load condition. This is accomplished by first elevating the gate voltage of the MOSFET up to its threshold voltage and then by linearly increasing the gate voltage until the MOSFET becomes fully enhanced. At this point, the gate voltage is then quickly increased to the full input voltage to reduce RDS(on) of the MOSFET switch and minimize any associated power losses.

Features

AI Translation
  • 1.5 V to 5.5 V input voltage range
  • No bias power rail required
  • Low on-resistance RDS(on), typically 105 mΩ at 5 V and 135 mΩ at 3 V for DFN4 1.2 mm x 1.6 mm package
  • Typical 147 mΩ at 5 V and 178 mΩ at 3 V for SC-70-6 package
  • Slew rate controlled turn-on time: 100 μs
  • Ultra low leakage and quiescent current:
    • VIN quiescent current = 0.01 nA
    • VIN shutdown leakage = 0.20 nA
  • Reverse blocking capability
  • SC-70-6 and TDFN4 1.2 mm x 1.6 mm packages

Applications

AI Translation
  • Wireless sensor network
  • Smart meters
  • Wearable
  • Internet of things
  • Portable medical devices
  • Security systems
  • Battery powered devices
  • Portable Instruments
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QtyUnit PriceTotal Amount
1+$ 0.5865$ 0.59
10+$ 0.4673$ 4.67
30+$ 0.4157$ 12.47
100+$ 0.3529$ 35.29
500+$ 0.3013$ 150.65
1,000+$ 0.2836$ 283.60
Standard Packaging3000/Full Reel
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