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TWGMC 2N7002RoHS

Manufacturer
TWGMCAsian Brands
MPN
2N7002
LCSC Part #
C727149
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 115mA SOT-23
Datasheetpdf iconTWGMC 2N7002
In-Stock: 48,650
48,650 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
50+$ 0.0148$ 0.0141$ 0.71
500+$ 0.0118$ 0.0113$ 5.65
3,000+$ 0.0089$ 0.0085$ 25.50
6,000+$ 0.0079$ 0.0076$ 45.60
24,000+$ 0.007$ 0.0067$ 160.80
51,000+$ 0.0066$ 0.0063$ 321.30
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTWGMC
PackagingSOT-23
Drain to Source Voltage60V
Current - Continuous Drain(Id)115mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)7.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These N-channel enhancement mode field effect transis-tors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching appli-cations.

Features

AI Translation
  • High Density Cell Design for Low RDS(ON)
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability

Applications

AI Translation
  • small servo motor control
  • power MOSFET gate drivers
  • other switching applications