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Infineon BSC010N04LS6ATMA1RoHS

Manufacturer
Infineon
MPN
BSC010N04LS6ATMA1
LCSC Part #
C7220836
Packaging
TDSON-8
Customer #
Key Attributes
MOSFET N-CH 40V 285A TDSON-8
Datasheetpdf iconInfineon BSC010N04LS6ATMA1
In-Stock: 5,954
5,954 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.0823$ 1.08
10+$ 0.8876$ 8.88
30+$ 0.7919$ 23.76
100+$ 0.6962$ 69.62
500+$ 0.6377$ 318.85
1,000+$ 0.6085$ 608.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTDSON-8
Drain to Source Voltage40V
Current - Continuous Drain(Id)285A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6nF
Gate Charge(Qg)67nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

Power MOS V® is a new generation of high-voltage N-channel enhancement-mode power MOSFETs. This new technology minimizes the JFET effect, improves packing density, and reduces on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Features

AI Translation
  • Optimized for synchronous application
  • Very low on-resistance Ros(on) 100% avalanche tested
  • Superior thermal resistance
  • N-channel
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21 175°C rated