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Infineon IMZA120R020M1HXKSA1RoHS

Manufacturer
Infineon
MPN
IMZA120R020M1HXKSA1
LCSC Part #
C7207676
Packaging
TO-247-4
Customer #
Key Attributes
CoolSiC 1200 V SiC Trench MOSFET: Silicon Carbide MOSFET with.XT Interconnection Technology
Datasheetpdf iconInfineon IMZA120R020M1HXKSA1
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QtyUnit Price(Reference Only)Total Amount
1+$ 13.0445$ 13.04
10+$ 12.4029$ 124.03
30+$ 11.2889$ 338.67
90+$ 10.3184$ 928.66
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247-4
Configuration-
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)98A
Output Capacitance(Coss)159pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation375W
RDS(on)19mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)23pF
Number1 N-channel
Input Capacitance(Ciss)3.46nF
Gate Charge(Qg)27.1nC
TypeN-Channel
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Features

AI Translation
  • VDSS = 1200 V at TVj = 25℃
  • IDDC = 98 A at Tc = 25℃
  • RDSS(on) = 19 mΩ at VGS = 18 V, TVj = 25℃
  • Very low switching losses
  • Short circuit withstand time 3 μs
  • Benchmark gate threshold voltage, VGDD(th) = 4.2 V
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • .XT interconnection technology for best-in-class thermal performance

Applications

AI Translation
  • General purpose drives (GPD)
  • EV-Charging
  • Online UPS/Industrial UPS
  • String inverter
  • Solar power optimizer