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onsemi FDS6898ARoHS

Manufacturer
onsemi
MPN
FDS6898A
LCSC Part #
C719837
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH ARR 20V 9.4A SO-8
Datasheetpdf icononsemi FDS6898A
In-Stock: 91
91 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9285$ 0.93
10+$ 0.7594$ 7.59
30+$ 0.6765$ 20.30
100+$ 0.5919$ 59.19
500+$ 0.5074$ 253.70
1,000+$ 0.4814$ 481.40
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSO-8
Current - Continuous Drain(Id)9.4A
Pd - Power Dissipation2W
RDS(on)14mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)208pF
Number2 N-Channel
Input Capacitance(Ciss)1.821nF
Gate Charge(Qg)16nC
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

AI Translation
  • 9.4 A, 20 V RDS(ON)=14 mΩ @ VGS=4.5 V
  • Low gate charge (16 nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability