onsemi FQD11P06TM
| Manufacturer | |
| MPN | FQD11P06TM |
| LCSC Part # | C719783 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 9.4A DPAK |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DPAK | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 9.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 185mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 17nC@48V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- -9.4 A, -60 V, RDS(on)=185 mΩ (Max.) @ VGS = -10 V, ID=-4.7 A
- Low Gate Charge (Typ. 13 nC)
- Low Crss (Typ. 45 pF)
- 100% Avalanche Tested
Applications
- switched mode power supplies
- audio amplifier
- DC motor control
- variable switching power applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5595 | $ 0.56 |
| 10+ | $ 0.4505 | $ 4.51 |
| 30+ | $ 0.3969 | $ 11.91 |
| 100+ | $ 0.3416 | $ 34.16 |
| 500+ | $ 0.309 | $ 154.50 |
| 1,000+ | $ 0.2928 | $ 292.80 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DPAK | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 9.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 185mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 17nC@48V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- -9.4 A, -60 V, RDS(on)=185 mΩ (Max.) @ VGS = -10 V, ID=-4.7 A
- Low Gate Charge (Typ. 13 nC)
- Low Crss (Typ. 45 pF)
- 100% Avalanche Tested
Applications
- switched mode power supplies
- audio amplifier
- DC motor control
- variable switching power applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



