- Pinout Diagram
- Footprint Diagram
onsemi MMBF170
| Manufacturer | |
| MPN | MMBF170 |
| LCSC Part # | C719769 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 500mA SOT-23 |
| Datasheet |  onsemi MMBF170 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 500mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- High Density Cell Design for Low RDS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- These are Pb −Free Devices
Applications
- small servo motor control
- power MOSFET gate drivers
- other switching applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 0.0453 | $ 0.23 |
| 50+ | $ 0.0443 | $ 2.22 |
| 150+ | $ 0.0437 | $ 6.56 |
| 500+ | $ 0.043 | $ 21.50 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 500mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- High Density Cell Design for Low RDS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- These are Pb −Free Devices
Applications
- small servo motor control
- power MOSFET gate drivers
- other switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |