Winsok Semicon WSD60N10GDN56
| Manufacturer | Winsok SemiconAsian Brands |
| MPN | WSD60N10GDN56 |
| LCSC Part # | C719101 |
| Packaging | DFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 60A DFN5x6-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 362pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.604nF | |
| Gate Charge(Qg) | 49.9nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 362pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.604nF | |
| Gate Charge(Qg) | 49.9nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The WSD60N10GDN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSD60N10GDN56 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Features
AI Translation
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- GreenDeviceAvailable
Applications
AI Translation
- Power Management in TV Converter.
- DC-DC Converter LED TV Back Light
In-Stock: 3,629
3,629 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6028$ 0.5426 | $ 0.54 |
| 10+ | $ 0.4858$ 0.4373 | $ 4.37 |
| 30+ | $ 0.4354$ 0.3919 | $ 11.76 |
| 100+ | $ 0.3737$ 0.3364 | $ 33.64 |
| 500+ | $ 0.2957$ 0.2662 | $ 133.10 |
| 1,000+ | $ 0.2795$ 0.2516 | $ 251.60 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 362pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.604nF | |
| Gate Charge(Qg) | 49.9nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 362pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.604nF | |
| Gate Charge(Qg) | 49.9nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The WSD60N10GDN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSD60N10GDN56 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Features
AI Translation
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- GreenDeviceAvailable
Applications
AI Translation
- Power Management in TV Converter.
- DC-DC Converter LED TV Back Light
C719101 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
