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DIODES DMT4008LFV-13 product image
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DIODES DMT4008LFV-13RoHS

Manufacturer
DIODES
MPN
DMT4008LFV-13
LCSC Part #
C7172129
Packaging
PowerDI3333-8
Customer #
Key Attributes
40V 3V 7.9mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS
Datasheetpdf iconDIODES DMT4008LFV-13
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6956$ 0.70
200+$ 0.2774$ 55.48
500+$ 0.2683$ 134.15
1,000+$ 0.2637$ 263.70
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingPowerDI3333-8
Drain to Source Voltage40V
Current - Continuous Drain(Id)12.1A;54.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.9W;35.7W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)7.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.179nF
Gate Charge(Qg)17.1nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • 100% unclamped inductive switching — ensuring greater reliability and durability in end applications
  • Low on-resistance
  • Low input capacitance
  • Fully lead-free and fully RoHS compliant
  • Halogen and antimony-free, "Green" device

Applications

AI Translation
  • Power management functions
  • DC-DC converter