DIODES DMT3008LFDF-7
| Manufacturer | |
| MPN | DMT3008LFDF-7 |
| LCSC Part # | C7172117 |
| Packaging | UDFN2020-6 |
| Customer # | |
| Key Attributes | 30V 12A 3V 10mΩ@10V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | UDFN2020-6 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 886pF | |
| Gate Charge(Qg) | 14nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- 0.6mm thickness — suitable for slim applications
- 4mm2 PCB footprint
- Low gate threshold voltage
- Low on-resistance
- Fully lead-free and fully RoHS compliant
- Halogen and antimony-free, "Green" device
Applications
AI Translation
- General-purpose interface switch
- Power management function
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.6956 | $ 0.70 |
| 200+ | $ 0.2774 | $ 55.48 |
| 500+ | $ 0.2683 | $ 134.15 |
| 1,000+ | $ 0.2637 | $ 263.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | UDFN2020-6 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 886pF | |
| Gate Charge(Qg) | 14nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- 0.6mm thickness — suitable for slim applications
- 4mm2 PCB footprint
- Low gate threshold voltage
- Low on-resistance
- Fully lead-free and fully RoHS compliant
- Halogen and antimony-free, "Green" device
Applications
AI Translation
- General-purpose interface switch
- Power management function
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

