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Infineon IRF7389TRPBFRoHS

Manufacturer
Infineon
MPN
IRF7389TRPBF
LCSC Part #
C71478
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 30V 5.9A SO-8
Datasheetpdf iconInfineon IRF7389TRPBF
In-Stock: 101
101 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.3257$ 1.33
10+$ 1.127$ 11.27
30+$ 1.0195$ 30.59
100+$ 0.8957$ 89.57
500+$ 0.842$ 421.00
1,000+$ 0.8176$ 817.60
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerInfineon
PackagingSO-8
Current - Continuous Drain(Id)5.9A
RDS(on)29mΩ@10V
Pd - Power Dissipation2.5W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)130pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)650pF
Gate Charge(Qg)22nC@10V
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO - 8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple - die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Features

AI Translation
  • Ultra-low on-resistance
  • Complementary half-bridge
  • Surface mount
  • Fully avalanche-rated
  • Lead-free