VISHAY V3PAN50-M3/I
| Manufacturer | |
| MPN | V3PAN50-M3/I |
| LCSC Part # | C7140908 |
| Packaging | DO-221BC(SMPA) |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 50V DO-221BC(SMPA) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | VISHAY | |
| Packaging | DO-221BC(SMPA) | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Voltage - Forward(Vf@If) | 540mV@3A | |
| Reverse Leakage Current (Ir) | 600uA@50V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
45 V to 200 V TMBS Trench MOS Barrier Schottky rectifiers feature high current density with current ratings from 3 A to 8 A in the low profile SMPA (DO - 221BC) package. The 45 V, 60 V, 100 V, 120 V, 150 V, and 200 V devices are AEC - Q101 qualified for automotive applications, while the 50 V rectifiers are ideal for commercial applications, especially smartphone and tablet chargers.
Features
- SMPA (DO-221BC) package with very low profile: 0.95 mm typical height
- Current ratings from 3 A to 8 A
- Low forward voltage drop down to 0.37 V at 3 A
- Low power losses and high efficiency
- Maximum operating junction temperature up to 175℃
- Trench MOS Schottky technology
- AEC-Q101 qualified
Applications
- For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diodes, and reverse battery protection in commercial, industrial, and automotive applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4992 | $ 0.50 |
| 10+ | $ 0.3972 | $ 3.97 |
| 30+ | $ 0.354 | $ 10.62 |
| 100+ | $ 0.2999 | $ 29.99 |
| 500+ | $ 0.2751 | $ 137.55 |
| 1,000+ | $ 0.2612 | $ 261.20 |
Standard Packaging2000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | VISHAY | |
| Packaging | DO-221BC(SMPA) | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Voltage - Forward(Vf@If) | 540mV@3A | |
| Reverse Leakage Current (Ir) | 600uA@50V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
45 V to 200 V TMBS Trench MOS Barrier Schottky rectifiers feature high current density with current ratings from 3 A to 8 A in the low profile SMPA (DO - 221BC) package. The 45 V, 60 V, 100 V, 120 V, 150 V, and 200 V devices are AEC - Q101 qualified for automotive applications, while the 50 V rectifiers are ideal for commercial applications, especially smartphone and tablet chargers.
Features
- SMPA (DO-221BC) package with very low profile: 0.95 mm typical height
- Current ratings from 3 A to 8 A
- Low forward voltage drop down to 0.37 V at 3 A
- Low power losses and high efficiency
- Maximum operating junction temperature up to 175℃
- Trench MOS Schottky technology
- AEC-Q101 qualified
Applications
- For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diodes, and reverse battery protection in commercial, industrial, and automotive applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



