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Qorvo UF4SC120030K4S product image
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Qorvo UF4SC120030K4SRoHS

Manufacturer
MPN
UF4SC120030K4S
LCSC Part #
C7136722
Packaging
-
Customer #
Key Attributes
1.2kV 53A 341W N-Channel Single FETs, MOSFETs RoHS
Datasheetpdf iconQorvo UF4SC120030K4S
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QtyUnit Price(Reference Only)Total Amount
1+$ 36.2883$ 36.29
210+$ 14.4803$ 3040.86
510+$ 13.9956$ 7137.76
990+$ 13.7572$ 13619.63
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerQorvo
Packaging-
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)53A
Pd - Power Dissipation341W
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

The UF4SC120030K4S is a 1200V, 30mΩ fourth-generation SiC FET. It is based on a unique cascode circuit configuration in which a normally-on SiC JFET is co-packaged with a Si MOSFET to form a normally-off SiC FET device. The standard gate drive characteristics of this device enable it to be a true drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-247-4L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Features

AI Translation
  • On-resistance RDS(on): 30mΩ (typical)
  • Operating temperature: 175°C (maximum)
  • Excellent reverse recovery: Qrr = 277nC
  • Low body diode VFSD: 1.22V
  • Low gate charge: QG = 37.8nC
  • Threshold voltage VG(th): 4.8V (typical), supports 0 to 15V drive
  • Low intrinsic capacitance
  • ESD protection: HBM Class 2 and CDM Class C3
  • TO-247-4L package for faster switching speed and clean gate waveform

Applications

AI Translation
  • Electric vehicle charging
  • Photovoltaic inverters
  • Switched-mode power supplies
  • Power factor correction modules
  • Motor drives
  • Induction heating