VBsemi Elec IRF7467TR-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRF7467TR-VB |
| LCSC Part # | C709991 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 11A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 11A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 12mΩ@10V;15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 6.8nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free
- TrenchFET Power MOSFET Optimized for High-Side Synchronous Rectifier Operation
- 100 % Rg Tested
- 100 % UIS Tested
Applications
AI Translation
- Notebook CPU Core - High-Side Switch
- N-Channel MOSFET
In-Stock: 180
180 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3459 | $ 1.73 |
| 50+ | $ 0.2747 | $ 13.74 |
| 150+ | $ 0.2442 | $ 36.63 |
| 500+ | $ 0.2061 | $ 103.05 |
| 2,500+ | $ 0.1832 | $ 458.00 |
| 4,000+ | $ 0.173 | $ 692.00 |
Standard Packaging4000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 11A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 12mΩ@10V;15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 6.8nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free
- TrenchFET Power MOSFET Optimized for High-Side Synchronous Rectifier Operation
- 100 % Rg Tested
- 100 % UIS Tested
Applications
AI Translation
- Notebook CPU Core - High-Side Switch
- N-Channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



