Nexperia BSN20BK215
| Manufacturer | |
| MPN | BSN20BK215 |
| LCSC Part # | C7091999 |
| Packaging | SOT-23(TO-236AB) |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 265mA SOT-23(TO-236AB) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23(TO-236AB) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 265mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 310mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 490pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection: 2 kV HBM
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswitch Switching circuits
In-Stock: 2,969
2,969 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8402 | $ 0.84 |
| 10+ | $ 0.68 | $ 6.80 |
| 30+ | $ 0.599 | $ 17.97 |
| 100+ | $ 0.5197 | $ 51.97 |
| 500+ | $ 0.4727 | $ 236.35 |
| 1,000+ | $ 0.4468 | $ 446.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23(TO-236AB) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 265mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 310mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 490pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection: 2 kV HBM
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side loadswitch Switching circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



