VISHAY SIC645AER-T1-GE3

The SiC645 is a smart VRPower device that integrates a high side and low side MOSFET, a high performance driver with integrated bootstrap FET. The SiC645 offers high accuracy current and temperature monitors that can be fed back to the controller and doubler to complete a multiphase DC/DC system. They simplify design and increase performance by eliminating the DCR sensing network and associated thermal compensation. Light-load efficiency is supported via a dedicated left control pin. An industry leading thermally enhanced dual cooled, 5 mm × 5 mm PowerPAK MLP package allows minimal overall PCB real estate and low profile construction. The devices feature a 3.3 V (SiC645A) or 5 V (SiC645) compatible tri-state PWM input that, working together with multiphase PWM controllers, will provide a robust solution in the event of abnormal operating conditions. The SiC645 also improves system performance and reliability with integrated fault protection of UVLO, over-temperature and over-current. An open-drain fault reporting pin simplifies the handshake between the smart VRPower device and multiphase controllers and can be used to disable the controller during start-up and fault conditions.

• Input range: 4.5 V to 18 V
• Supports 60 A DC current
• Compatible with 3.3 V (SiC645A) and 5 V (SiC645) tri-state PWM
• Down slope current sensing
• ±3 % accuracy current monitor (IMON) with REF_IN input
• 8 mV/°C temperature monitor with OT flag
• Dedicated low side FET control input
• Fault protection - High side FET short and over-current protection - Over-temperature protection - V_CC and V_IN under voltage lockout (UVLO)
• Open drain fault reporting output
• Up to 2 MHz switching frequency

• High frequency and high efficiency VRM and VRD
• Core, graphic, and memory regulators for microprocessors
• High density VR for server, networking, and cloud computing
• POL DC/DC converters and video gaming consoles