DIODES DMN2020UFCL-7
| Manufacturer | |
| MPN | DMN2020UFCL-7 |
| LCSC Part # | C705312 |
| Packaging | X1-DFN1616-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 9A X1-DFN1616-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | X1-DFN1616-6 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.788nF | |
| Gate Charge(Qg) | 21.5nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Typical off board profile of 0.5mm - ideally suited for thin applications
- Low RDS(ON) – minimizes conduction losses
- PCB footprint of 2.56mm²
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 standards for High Reliability
Applications
AI Translation
- Power management functions
- Load Switch
In-Stock: 75
75 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.145 | $ 0.73 |
| 50+ | $ 0.1428 | $ 7.14 |
| 150+ | $ 0.1413 | $ 21.20 |
| 500+ | $ 0.1398 | $ 69.90 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | X1-DFN1616-6 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.788nF | |
| Gate Charge(Qg) | 21.5nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Typical off board profile of 0.5mm - ideally suited for thin applications
- Low RDS(ON) – minimizes conduction losses
- PCB footprint of 2.56mm²
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 standards for High Reliability
Applications
AI Translation
- Power management functions
- Load Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



