TI CSD87501L
| Manufacturer | |
| MPN | CSD87501L |
| LCSC Part # | C701751 |
| Packaging | PicostAr-10(1.5x3.4) |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 14A PicostAr-10(1.5x3.4) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | TI | |
| Packaging | PicostAr-10(1.5x3.4) | |
| Configuration | Common Drain | |
| Current - Continuous Drain(Id) | 14A | |
| RDS(on) | 7.8mΩ@10V | |
| Pd - Power Dissipation | 2.5W | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 198pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.11nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 246pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
30V, 6.6mΩ, 3.37mm × 1.47mm LGA dual NexFET power MOSFET designed to minimize resistance and gate charge in a small form factor package. The device features a compact size and common-drain configuration, making it ideal for multi-cell battery pack applications and small handheld devices.
Features
AI Translation
- Low on-resistance
- Compact 3.37mm × 1.47mm footprint
- Ultra-thin 0.2mm height
- Lead-free
- RoHS compliant
- Halogen-free
- Gate ESD protection
Applications
AI Translation
- Battery Management
- Battery Protection
- USB Type-C/PD
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.9803 | $ 0.98 |
| 10+ | $ 0.7997 | $ 8.00 |
| 30+ | $ 0.7078 | $ 21.23 |
| 100+ | $ 0.6191 | $ 61.91 |
| 500+ | $ 0.5401 | $ 270.05 |
| 1,000+ | $ 0.5127 | $ 512.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | TI | |
| Packaging | PicostAr-10(1.5x3.4) | |
| Configuration | Common Drain | |
| Current - Continuous Drain(Id) | 14A | |
| RDS(on) | 7.8mΩ@10V | |
| Pd - Power Dissipation | 2.5W | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 198pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.11nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 246pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
30V, 6.6mΩ, 3.37mm × 1.47mm LGA dual NexFET power MOSFET designed to minimize resistance and gate charge in a small form factor package. The device features a compact size and common-drain configuration, making it ideal for multi-cell battery pack applications and small handheld devices.
Features
AI Translation
- Low on-resistance
- Compact 3.37mm × 1.47mm footprint
- Ultra-thin 0.2mm height
- Lead-free
- RoHS compliant
- Halogen-free
- Gate ESD protection
Applications
AI Translation
- Battery Management
- Battery Protection
- USB Type-C/PD
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



