HUASHUO AO3415
| Manufacturer | HUASHUOAsian Brands |
| MPN | AO3415 |
| LCSC Part # | C700955 |
| Packaging | SOT-23L |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 4.3A SOT-23L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23L | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 900pF | |
| Gate Charge(Qg) | 11nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO3415 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The AO3415 meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Super Low Gate Charge
- Green Device Available
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
- ESD Protect 2KV
In-Stock: 1,450
1,450 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0841 | $ 0.84 |
| 100+ | $ 0.0676 | $ 6.76 |
| 300+ | $ 0.0593 | $ 17.79 |
| 3,000+ | $ 0.049 | $ 147.00 |
| 6,000+ | $ 0.044 | $ 264.00 |
| 9,000+ | $ 0.0415 | $ 373.50 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23L | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 900pF | |
| Gate Charge(Qg) | 11nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO3415 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The AO3415 meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Super Low Gate Charge
- Green Device Available
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
- ESD Protect 2KV
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



