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Cmos MJD112T4G product image
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Cmos MJD112T4GRoHS

Manufacturer
CmosAsian Brands
MPN
MJD112T4G
LCSC Part #
C6939779
Packaging
TO-252
Customer #
Key Attributes
100V 2A NPN TO-252 Single Bipolar Transistors RoHS
Datasheetpdf iconCmos MJD112T4G
In-Stock: 85
85 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.218$ 0.2071$ 1.04
50+$ 0.1787$ 0.1698$ 8.49
150+$ 0.1618$ 0.1538$ 23.07
500+$ 0.1408$ 0.1338$ 66.90
2,500+$ 0.1283$ 0.1219$ 304.75
5,000+$ 0.1227$ 0.1166$ 583.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerCmos
PackagingTO-252
Current - Collector Cutoff100nA
Vbe On(VBE(on))2.5V
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
Current - Collector(Ic)2A
Pd - Power Dissipation20W
typeNPN
Vce Saturation(VCE(sat))1.5V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These devices are manufactured using a planar process with a "base island" layout and a monolithic Darlington configuration. The resulting transistors exhibit extremely high gain performance and very low saturation voltage.

Features

AI Translation
  • Low collector-emitter saturation voltage
  • Integrated anti-parallel collector-emitter diode

Applications

AI Translation
  • General-purpose linear and switching applications