VBsemi Elec NDT2955-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | NDT2955-VB |
| LCSC Part # | C693363 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 7A SOT-223 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 200pF | |
| Current - Continuous Drain(Id) | 7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 55mΩ@10V;65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 38nC@10V;19nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 100% unclamped inductive switching (UIS) tested
Applications
AI Translation
- Load Switch
In-Stock: 86
86 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6057$ 0.5755 | $ 0.58 |
| 10+ | $ 0.4862$ 0.4619 | $ 4.62 |
| 30+ | $ 0.4345$ 0.4128 | $ 12.38 |
| 100+ | $ 0.3699$ 0.3515 | $ 35.15 |
| 500+ | $ 0.294$ 0.2793 | $ 139.65 |
| 1,000+ | $ 0.2778$ 0.2640 | $ 264.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 200pF | |
| Current - Continuous Drain(Id) | 7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 55mΩ@10V;65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 38nC@10V;19nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- 100% unclamped inductive switching (UIS) tested
Applications
AI Translation
- Load Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



