VBsemi Elec AON6405-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | AON6405-VB |
| LCSC Part # | C693296 |
| Packaging | DFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 47.3A DFN5x6-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 880pF | |
| Current - Continuous Drain(Id) | 47.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 3.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 820pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.62nF | |
| Gate Charge(Qg) | 66nC | |
| Vgs | ±20V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Extended VGS range (±25 V) for adapter switching applications
- Ultra-low RDS(on)
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
Applications
AI Translation
- Primary-Side Switch - N-Channel MOSFET
In-Stock: 45
45 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7906 | $ 0.79 |
| 10+ | $ 0.6367 | $ 6.37 |
| 30+ | $ 0.5598 | $ 16.79 |
| 100+ | $ 0.4828 | $ 48.28 |
| 500+ | $ 0.4376 | $ 218.80 |
| 1,000+ | $ 0.4134 | $ 413.40 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 880pF | |
| Current - Continuous Drain(Id) | 47.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 3.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 820pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.62nF | |
| Gate Charge(Qg) | 66nC | |
| Vgs | ±20V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Extended VGS range (±25 V) for adapter switching applications
- Ultra-low RDS(on)
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
Applications
AI Translation
- Primary-Side Switch - N-Channel MOSFET
C693296 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



