TI TMS44100-80DJ

The TMS4x100 series are high-speed, 4194304-bit dynamic random-access memories, organized as 4194304 words of one bit each. The TMS4x100P series are high-speed, low-power, self-refresh with extended-refresh, 4194304-bit dynamic random-access memories, organized as 4194304 words of one bit each. Both series employ state-of-the-art EPIC (Enhanced Performance Implanted CMOS) technology for high performance, reliability, and low voltage. These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS4x100 and TMS4x100P are offered in a 20-/26-lead plastic surface-mount small-outline (TSOP) package (DGA suffix) and a 300-mil 20-/26-lead plastic surface-mount SOJ package (DJ suffix). Both packages are characterized for operation from 0°C to 70°C.

• Single 5 V Power Supply, for TMS44100/P (±10% Tolerance)
• Single 3.3 V Power Supply, for TMS46100/P (±10% Tolerance)
• Low Power Dissipation (TMS46100P only) – 200-μA CMOS Standby – 200-μA Self Refresh – 300-μA Extended-Refresh Battery Backup
• Enhanced Page-Mode Operation for Faster Memory Access
• CAS-Before-RAS (CBR) Refresh
• Long Refresh Period – 1024-Cycle Refresh in 16 ms – 128 ms (Max) for Low-Power, Self-Refresh Version (TMS4x100P)
• 3-State Unlatched Output
• Texas Instruments EPIC CMOS Process
• Operating Free-Air Temperature Range 0°C to 70°C