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TOSHIBA TCK422G,L3F product image
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TOSHIBA TCK422G,L3FRoHS

Manufacturer
MPN
TCK422G,L3F
LCSC Part #
C6880236
Packaging
WCSPG-6(0.8x1.2)
Customer #
Key Attributes
2.7V~28V WCSPG-6(0.8x1.2) Gate Drivers RoHS
Datasheetpdf iconTOSHIBA TCK422G,L3F
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.7696$ 0.77
200+$ 0.3082$ 61.64
500+$ 0.2971$ 148.55
1,000+$ 0.2924$ 292.40
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTOSHIBA
PackagingWCSPG-6(0.8x1.2)
Input Logic Level - Low-
Low Level Delay Time-
High Level Delay Time-
Quiescent Current185uA
Input Logic Level - High1.2V~5.5V
Operating Temperature-40℃~+85℃
Voltage - Supply2.7V~28V
Driven ConfigurationHigh Side
Current - Output Low(IOL)-
Rise Time-
Fall Time-
Current - Output High(IOH)-
FeaturesUnder Voltage Protection;Charge pump boost;Over Voltage Protection
Load TypeMOSFET

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

TCK42xG series is Over Voltage Protection Gate Driver IC for External N-channel MOSFET. This product support to MOSFET operating in wide voltage line from 2.7 V to 28 V with various Over Voltage Lock Out lineups. And this features low standby current, less than 1 μA, built in charge pump circuit and MOSFET gatesource protection circuit. Package is very small and thin WCSP6G (1.2 mm×0.8 mm (typ.), t: 0.35 mm (max)). Thus this is suitable for mobile, wearable system and power management circuit such as load switch application.

Features

AI Translation
  • Gate driver for N-channel Common Drain MOSFET
  • Gate driver for N-channel Single High side MOSFET
  • High maximum input voltage: V_IN_max = 40 V
  • Wide input voltage operation: V_IN = 2.7 to 28 V
  • Gate-Source protection circuit
  • Over Voltage Lock Out: V_IN_OVLO = 6.31 V, 10.83 V, 14.29 V, 23.26 V and 27.73 V typ
  • Under Voltage Lock Out: V_IN_UVLO = 2.0 V typ
  • Built in Charge pump circuit: Gate source voltage V_GS = 5.6 V and 10 V typ
  • Low standby current: I_Q(OFF) = 0.9 μA max at V_IN = 12 V (Except TCK424G, TCK425G)

Applications

AI Translation
  • Load switch circuit for mobile, wearable, and IoT equipment