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onsemi FDC637BNZRoHS

Manufacturer
onsemi
MPN
FDC637BNZ
LCSC Part #
C68302
Packaging
SSOT-6
Customer #
Key Attributes
20V 6.2A 800mV 1.6W 24mΩ@4.5V 1 N-channel SSOT-6 Single FETs, MOSFETs RoHS
Datasheetpdf icononsemi FDC637BNZ
In-Stock: 125
125 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1468$ 0.73
50+$ 0.1174$ 5.87
150+$ 0.1028$ 15.42
500+$ 0.0918$ 45.90
3,000+$ 0.0829$ 248.70
6,000+$ 0.0785$ 471.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSSOT-6
Drain to Source Voltage20V
Current - Continuous Drain(Id)6.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)175pF
RDS(on)24mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)895pF
Gate Charge(Qg)12nC@4.5V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-channel 2.5V-rated MOSFET is manufactured using an advanced PowerTrench process, specially optimized to reduce on-resistance while maintaining low gate charge for superior switching performance. Compared to the larger SO-8 and TSSOP-8 packages, these devices achieve excellent power dissipation in an extremely small footprint.

Features

AI Translation
  • Maximum rDS(on) = 24 mΩ at VGS = 4.5 V, ID = 6.2 A
  • Maximum rDS(on) = 32 mΩ at VGS = 2.5 V, ID = 5.2 A
  • Fast switching speed
  • Low gate charge (typical 8 nC)
  • High-performance trench technology for ultra-low rDS(on)
  • SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm)
  • Typical HBM ESD protection rating >2 kV
  • Manufactured with eco-friendly packaging materials
  • Halogen-free
  • RoHS compliant

Applications

AI Translation
  • DC-DC Conversion - Load Switch - Battery Protection