LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Infineon IRLR2905ZTRPBF product image
  • IRLR2905ZTRPBF thumbnail 1
  • IRLR2905ZTRPBF thumbnail 2
  • IRLR2905ZTRPBF thumbnail 3
  • Pinout
  • Footprint
Images for reference only

Infineon IRLR2905ZTRPBFRoHS

Manufacturer
MPN
IRLR2905ZTRPBF
LCSC Part #
C68209
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 55V 42A TO-252
Datasheetpdf iconInfineon IRLR2905ZTRPBF
In-Stock: 3,588
3,588 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7099$ 0.71
10+$ 0.5569$ 5.57
30+$ 0.4917$ 14.75
100+$ 0.4103$ 41.03
500+$ 0.3729$ 186.45
1,000+$ 0.3517$ 351.70
Standard Packaging2000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252
Drain to Source Voltage55V
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)13.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.57nF
Gate Charge(Qg)35nC

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalancherating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

AI Translation
  • Logic Level
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free