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Infineon IRLR2905ZTRPBF

Manufacturer
MPN
IRLR2905ZTRPBF
LCSC Part #
C68209
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 55V 42A TO-252
DatasheetInfineon IRLR2905ZTRPBF
RoHS Compliance1 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252
Output Capacitance(Coss)230pF
Ciss-Input Capacitance1.57nF
Pd - Power Dissipation110W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage55V
Current - Continuous Drain(Id)42A
Reverse Transfer Capacitance (Crss)130pF
RDS(on)13.5mΩ@10V
Number1 N-channel
Gate Charge(Qg)35nC
Vgs±16V
Gate Threshold Voltage (Vgs(th))3V
TypeN-Channel

Introduction

AI Translation

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalancherating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

AI Translation
  • Logic Level
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free