Infineon IRLR2905ZTRPBF
| Manufacturer | |
| MPN | IRLR2905ZTRPBF |
| LCSC Part # | C68209 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 55V 42A TO-252 |
| Datasheet | Infineon IRLR2905ZTRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 230pF | |
| Ciss-Input Capacitance | 1.57nF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 42A | |
| Reverse Transfer Capacitance (Crss) | 130pF | |
| RDS(on) | 13.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 35nC | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 230pF | |
| Ciss-Input Capacitance | 1.57nF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 42A | |
| Reverse Transfer Capacitance (Crss) | 130pF | |
| RDS(on) | 13.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 35nC | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Introduction
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalancherating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Logic Level
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 230pF | |
| Ciss-Input Capacitance | 1.57nF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 42A | |
| Reverse Transfer Capacitance (Crss) | 130pF | |
| RDS(on) | 13.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 35nC | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 230pF | |
| Ciss-Input Capacitance | 1.57nF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 42A | |
| Reverse Transfer Capacitance (Crss) | 130pF | |
| RDS(on) | 13.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 35nC | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Introduction
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalancherating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Logic Level
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
C68209 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



