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VISHAY SIR112DP-T1-RE3 product image
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VISHAY SIR112DP-T1-RE3RoHS

Manufacturer
VISHAY
MPN
SIR112DP-T1-RE3
LCSC Part #
C6816920
Packaging
PowerPAKSO-8
Customer #
Key Attributes
MOSFET N-CH 40V 133A PowerPAKSO-8
Datasheetpdf iconVISHAY SIR112DP-T1-RE3
In-Stock: 208
208 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.8083$ 1.81
10+$ 1.688$ 16.88
30+$ 1.6133$ 48.40
100+$ 1.5369$ 153.69
500+$ 1.5012$ 750.60
1,000+$ 1.4866$ 1486.60
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAKSO-8
Drain to Source Voltage40V
Output Capacitance(Coss)680pF
Current - Continuous Drain(Id)133A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)2.65mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.27nF
Gate Charge(Qg)89nC@10V
TypeN-Channel
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Features

AI Translation
  • TrenchFET Gen IV power MOSFET
  • 100 % Rg and UIS tested
  • Qgd/Qgs ratio <1 optimizes switching characteristics

Applications

AI Translation
  • Synchronous rectification
  • OR-ing
  • High power density DC/DC
  • VRMs and embedded DC/DC
  • DC/AC inverters
  • Load switch