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Infineon SI4435DYTRPBF product image
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Infineon SI4435DYTRPBFRoHS

Manufacturer
Infineon
MPN
SI4435DYTRPBF
LCSC Part #
C67287
Packaging
SO-8
Customer #
Key Attributes
MOSFET P-CH 30V 8A SO-8
Datasheetpdf iconInfineon SI4435DYTRPBF
In-Stock: 1,123
1,123 In stock, ships now
Discontinued
Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
1+$ 1.2814$ 1.28
10+$ 1.0863$ 10.86
30+$ 0.9887$ 29.66
100+$ 0.8928$ 89.28
500+$ 0.8115$ 405.75
1,000+$ 0.7822$ 782.20
Standard Packaging4000/Full Reel

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSO-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)20mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.32nF
Gate Charge(Qg)60nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

These P-channel HEXFET Power MOSFETs utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique

Features

AI Translation
  • Ultra-low on-resistance
  • Surface mount
  • Tape and reel packaging available
  • Lead-free