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Infineon IRLR3114ZTRPBF product image
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Infineon IRLR3114ZTRPBFRoHS

Manufacturer
Infineon
MPN
IRLR3114ZTRPBF
LCSC Part #
C67278
Packaging
TO-252-2(DPAK)
Customer #
Key Attributes
40V 130A 2.5V 140W 4.9mΩ@10V 1 N-channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IRLR3114ZTRPBF

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252-2(DPAK)
Drain to Source Voltage40V
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation140W
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.81nF
Gate Charge(Qg)56nC@4.5V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

This HEXFET power MOSFET utilizes the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for a wide range of applications.

Features

AI Translation
  • Advanced process technology
  • Ultra-low on-resistance
  • 175°C operating temperature
  • Fast switching
  • Repetitive avalanche rated up to maximum junction temperature Tjmax
  • Logic level
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.2478$ 1.25
10+$ 1.0669$ 10.67
30+$ 0.9657$ 28.97
100+$ 0.8538$ 85.38
500+$ 0.7818$ 390.90
1,000+$ 0.7588$ 758.80
Standard Packaging2000/Full Reel
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