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Infineon IRLR3110ZTRPBFRoHS

Manufacturer
Infineon
MPN
IRLR3110ZTRPBF
LCSC Part #
C67277
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 63A TO-252
Datasheetpdf iconInfineon IRLR3110ZTRPBF
In-Stock: 2,271
2,271 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.0749$ 1.07
10+$ 0.8729$ 8.73
30+$ 0.772$ 23.16
100+$ 0.6726$ 67.26
500+$ 0.5261$ 263.05
1,000+$ 0.4951$ 495.10
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252
Drain to Source Voltage100V
Current - Continuous Drain(Id)63A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.98nF
Gate Charge(Qg)48nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax

Applications

AI Translation
  • Industrial applications