DIODES DMN32D2LDF-7
| Manufacturer | |
| MPN | DMN32D2LDF-7 |
| LCSC Part # | C672154 |
| Packaging | SOT-353 |
| Customer # | |
| Key Attributes | 400mA 280mW 1.2Ω@4V 1.2V 2 N-Channel SOT-353 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-353 | |
| Configuration | Common source | |
| Current - Continuous Drain(Id) | 400mA | |
| Pd - Power Dissipation | 280mW | |
| RDS(on) | 1.2Ω@4V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Drain to Source Voltage | 30V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.6pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 39pF | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Common-source dual N-channel MOSFET
- Low on-resistance
- Ultra-low gate threshold voltage, 1.2V maximum
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Compact SMT package
- ESD protection on gate
- Lead-free / RoHS compliant
- "Green" device
- AEC-Q101 high reliability qualified
In-Stock: 2,380
2,380 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.116 | $ 0.58 |
| 50+ | $ 0.0968 | $ 4.84 |
| 150+ | $ 0.0873 | $ 13.10 |
| 500+ | $ 0.0801 | $ 40.05 |
| 3,000+ | $ 0.0719 | $ 215.70 |
| 6,000+ | $ 0.0691 | $ 414.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-353 | |
| Configuration | Common source | |
| Current - Continuous Drain(Id) | 400mA | |
| Pd - Power Dissipation | 280mW | |
| RDS(on) | 1.2Ω@4V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Drain to Source Voltage | 30V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.6pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 39pF | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Common-source dual N-channel MOSFET
- Low on-resistance
- Ultra-low gate threshold voltage, 1.2V maximum
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Compact SMT package
- ESD protection on gate
- Lead-free / RoHS compliant
- "Green" device
- AEC-Q101 high reliability qualified
C672154 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



