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Infineon BSC030N03MSGATMA1RoHS

Manufacturer
Infineon
MPN
BSC030N03MSGATMA1
LCSC Part #
C672125
Packaging
TDSON-8
Customer #
Key Attributes
MOSFET N-CH 30V 109A TDSON-8
Datasheetpdf iconInfineon BSC030N03MSGATMA1
In-Stock: 20
20 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.8043$ 1.0657$ 1.07
10+$ 2.396$ 0.9105$ 9.11
30+$ 2.1422$ 0.8141$ 24.42
100+$ 1.8806$ 0.7147$ 71.47
500+$ 1.7623$ 0.6697$ 334.85
1,000+$ 1.7119$ 0.6506$ 650.60
2,000+$ 1.6914$ 0.6428$ 1285.60
5,000+$ 1.6772$ 0.6374$ 3187.00
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTDSON-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)109A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)3.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.7nF
Gate Charge(Qg)73nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

Super Junction Power MOSFETs are a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The SJ MOSFET is a cost-performance-optimized product for cost-sensitive applications in the consumer and lighting markets.

Features

AI Translation
  • Optimized for 5V driver application (Notebook, VGA, POL)
  • Low FOMSW for High Frequency SMPS
  • 100% avalanche tested
  • N-channel
  • Very low on-resistance RDS(on) ~VGS = 4.5 V
  • Excellent gate charge x RDS(on) product (FOM)
  • Qualified according to JEDEC for target applications
  • Superior thermal resistance
  • Pb-free plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21

Applications

AI Translation
  • Switched-Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Power Factor Correction (PFC)