AGMSEMI AGM6014AP
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM6014AP |
| LCSC Part # | C6719405 |
| Packaging | PDFN-8(3.3x3.3) |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 72A PDFN-8(3.3x3.3) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 631pF | |
| Current - Continuous Drain(Id) | 72A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 54W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 4.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.524nF | |
| Gate Charge(Qg) | 33nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
AGM6014AP combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low RDS(ON). The device is ideal for load switch and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low R DS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- Switching Power Supply Secondary-Side Synchronous Rectifier
- Point-of-Load Applications
- Brushless DC Motor Driver
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 0.2032$ 0.1931 | $ 0.97 |
| 50+ | $ 0.1984$ 0.1885 | $ 9.43 |
| 150+ | $ 0.1951$ 0.1854 | $ 27.81 |
| 500+ | $ 0.1886$ 0.1792 | $ 89.60 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 631pF | |
| Current - Continuous Drain(Id) | 72A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 54W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 4.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.524nF | |
| Gate Charge(Qg) | 33nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
AGM6014AP combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low RDS(ON). The device is ideal for load switch and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low R DS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- Switching Power Supply Secondary-Side Synchronous Rectifier
- Point-of-Load Applications
- Brushless DC Motor Driver
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



