Minos MD100N20
| Manufacturer | MinosAsian Brands |
| MPN | MD100N20 |
| LCSC Part # | C6719394 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 100A TO-247 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Minos | |
| Packaging | TO-247 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 390W | |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.65nF | |
| Gate Charge(Qg) | 152nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
MD100N20 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, High speed switching and general purpose application
Features
AI Translation
- VDS=200V, ID= 100A
- RDS(ON) <28mΩ @ VGS=10V
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product
Applications
AI Translation
- High frequency switching mode power supply
In-Stock: 87
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.8338 | $ 1.83 |
| 10+ | $ 1.5716 | $ 15.72 |
| 30+ | $ 1.2762 | $ 38.29 |
| 90+ | $ 1.1088 | $ 99.79 |
| 510+ | $ 1.033 | $ 526.83 |
| 990+ | $ 0.9998 | $ 989.80 |
Standard Packaging30/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Minos | |
| Packaging | TO-247 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 390W | |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.65nF | |
| Gate Charge(Qg) | 152nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
MD100N20 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, High speed switching and general purpose application
Features
AI Translation
- VDS=200V, ID= 100A
- RDS(ON) <28mΩ @ VGS=10V
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product
Applications
AI Translation
- High frequency switching mode power supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



