VBsemi Elec FDS6681Z-NL-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | FDS6681Z-NL-VB |
| LCSC Part # | C6705262 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 18A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.42nF | |
| Current - Continuous Drain(Id) | 18A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 5.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 5mΩ@10V;8mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.49nF | |
| Gate Charge(Qg) | 27nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench 4th Generation P-Channel Power MOSFET
- Higher power density capability
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
Applications
AI Translation
- Mobile device battery management
- Adapter and charger switching
- Battery switching
- Load switching
In-Stock: 36
36 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7629 | $ 0.76 |
| 10+ | $ 0.615 | $ 6.15 |
| 30+ | $ 0.5403 | $ 16.21 |
| 100+ | $ 0.4671 | $ 46.71 |
| 500+ | $ 0.4329 | $ 216.45 |
| 1,000+ | $ 0.4095 | $ 409.50 |
Standard Packaging4000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.42nF | |
| Current - Continuous Drain(Id) | 18A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 5.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 5mΩ@10V;8mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.49nF | |
| Gate Charge(Qg) | 27nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench 4th Generation P-Channel Power MOSFET
- Higher power density capability
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
Applications
AI Translation
- Mobile device battery management
- Adapter and charger switching
- Battery switching
- Load switching
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



