LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
Infineon IRLR3915TRPBF product image
  • IRLR3915TRPBF thumbnail 1
  • IRLR3915TRPBF thumbnail 2
  • IRLR3915TRPBF thumbnail 3
  • Pinout
  • Footprint
Images for reference only

Infineon IRLR3915TRPBFRoHS

Manufacturer
Infineon
MPN
IRLR3915TRPBF
LCSC Part #
C66853
Packaging
TO-252-2(DPAK)
Customer #
Key Attributes
55V 30A 1V 120W 14mΩ@10V 1 N-channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IRLR3915TRPBF
In-Stock: 474
474 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.1869$ 1.19
10+$ 0.9913$ 9.91
30+$ 0.8934$ 26.80
100+$ 0.7973$ 79.73
500+$ 0.7402$ 370.10
1,000+$ 0.7092$ 709.20
Standard Packaging2000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252-2(DPAK)
Drain to Source Voltage55V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation120W
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.87nF
Gate Charge(Qg)92nC@10V
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

This HEXFET power MOSFET utilizes the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. The combination of these characteristics makes this design an extremely efficient and reliable device suitable for a wide range of applications.

Features

AI Translation
  • Advanced process technology
  • Ultra-low on-resistance
  • 175°C operating temperature
  • Fast switching
  • Repetitive avalanche rated up to maximum junction temperature Tjmax
  • Lead-free