MICROCHIP MSC035SMA070B4
| Manufacturer | |
| MPN | MSC035SMA070B4 |
| LCSC Part # | C6684980 |
| Packaging | TO-247-4L |
| Customer # | |
| Key Attributes | Silicon Carbide N-Channel Power MOSFET |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-4L | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 247pF | |
| Current - Continuous Drain(Id) | 77A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 283W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 44mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.01nF | |
| Gate Charge(Qg) | 99nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 10 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA070B4 device is a 700 V, 35 mΩ SiC MOSFET in a TO-247 package with a source sense.
Features
AI Translation
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max)=175 ℃
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS compliant
Applications
AI Translation
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
In-Stock: 5
5 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 21.3337$ 10.4536 | $ 10.45 |
| 30+ | $ 20.3458$ 9.9695 | $ 299.09 |
Standard Packaging10/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-4L | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 247pF | |
| Current - Continuous Drain(Id) | 77A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 283W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 44mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.01nF | |
| Gate Charge(Qg) | 99nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 10 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA070B4 device is a 700 V, 35 mΩ SiC MOSFET in a TO-247 package with a source sense.
Features
AI Translation
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max)=175 ℃
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS compliant
Applications
AI Translation
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |



