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MICROCHIP MSC035SMA070B4RoHS

Manufacturer
MPN
MSC035SMA070B4
LCSC Part #
C6684980
Packaging
TO-247-4L
Customer #
Key Attributes
Silicon Carbide N-Channel Power MOSFET
Datasheetpdf iconMICROCHIP MSC035SMA070B4
In-Stock: 5
5 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 21.3337$ 10.4536$ 10.45
30+$ 20.3458$ 9.9695$ 299.09
Standard Packaging10/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMICROCHIP
PackagingTO-247-4L
Drain to Source Voltage700V
Output Capacitance(Coss)247pF
Current - Continuous Drain(Id)77A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation283W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)44mΩ
Number1 N-channel
Input Capacitance(Ciss)2.01nF
Gate Charge(Qg)99nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging10
Sales UnitPiece

Introduction

AI Translation

The silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA070B4 device is a 700 V, 35 mΩ SiC MOSFET in a TO-247 package with a source sense.

Features

AI Translation
  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max)=175 ℃
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS compliant

Applications

AI Translation
  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution