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UMW SVT078R0ND(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
SVT078R0ND(UMW)
LCSC Part #
C668216
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 68V 88A TO-252
Datasheetpdf iconUMW SVT078R0ND(UMW)
In-Stock: 4,210
4,210 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.3074$ 1.54
50+$ 0.24$ 12.00
150+$ 0.2111$ 31.67
500+$ 0.1751$ 87.55
2,500+$ 0.159$ 397.50
5,000+$ 0.1494$ 747.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingTO-252
Drain to Source Voltage68V
Output Capacitance(Coss)323pF
Current - Continuous Drain(Id)88A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)242pF
RDS(on)6.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.1nF
Gate Charge(Qg)86nC@10V
TypeN-Channel

Introduction

AI Translation

These N-channel enhancement mode power MOSFETs are designed with advanced trench technology, featuring excellent R<sub>DS(ON)</sub> and low gate charge, RoHS compliant.

Features

AI Translation
  • Fast switching
  • Low on-resistance (RDS(ON) ≤ 29mΩ)
  • Low gate charge
  • VDS(V) = 68 V
  • ID = 88 A \left(VGS = 10 V\right)
  • RDS(ON) = 6.3 m Ω \left(VGS = 10 V\right)