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VISHAY SIRA90DP-T1-RE3 product image
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VISHAY SIRA90DP-T1-RE3RoHS

Manufacturer
VISHAY
MPN
SIRA90DP-T1-RE3
LCSC Part #
C6680143
Packaging
PowerPAKSO-8
Customer #
Key Attributes
MOSFET N-CH 30V 65.8A PowerPAKSO-8
Datasheetpdf iconVISHAY SIRA90DP-T1-RE3
In-Stock: 2,169
2,169 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 2.013$ 2.01
10+$ 1.7433$ 17.43
30+$ 1.5954$ 47.86
100+$ 1.4265$ 142.65
500+$ 1.3534$ 676.70
1,000+$ 1.3192$ 1319.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAKSO-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)65.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation6.25W
RDS(on)0.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)306pF
Number1 N-channel
Input Capacitance(Ciss)10.18nF
Gate Charge(Qg)48nC@10V
TypeN-Channel
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Features

AI Translation
  • TrenchFET Gen IV power MOSFET
  • 100 % Rg and UIS tested

Applications

AI Translation
  • Synchronous rectification
  • OR-ing
  • High power density DC/DC
  • VRMs and embedded DC/DC
  • High current load switching