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ADI HMC349AMS8GETRRoHS

Manufacturer
MPN
HMC349AMS8GETR
LCSC Part #
C662138
Packaging
MSOP-8-EP
Customer #
Key Attributes
High Isolation, Nonreflective GaAs SPDT Switch
Datasheetpdf iconADI HMC349AMS8GETR
In-Stock: 532
532 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 6.1357$ 5.7676$ 5.77
10+$ 5.346$ 5.0253$ 50.25
30+$ 4.8634$ 4.5716$ 137.15
100+$ 3.8738$ 3.6414$ 364.14
Standard Packaging500/Full Reel
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Products Specifications

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TypeDescription
CategoryRF and Wireless/RF Switches
ManufacturerADI
PackagingMSOP-8-EP
Frequency range0Hz~4GHz
FeaturesIntegrated control logic;Integrated impedance matching network
Voltage - Supply5V
P1dB34dBm
operating temperature-40℃~+85℃

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging500
Sales UnitPiece

Introduction

AI Translation

The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz. The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm. The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface. The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.

Features

AI Translation
  • Nonreflective, 50 Ω design
  • High isolation: 57 dB to 2 GHz
  • Low insertion loss: 0.9 dB to 2 GHz
  • High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical
  • High power handling 33.5 dBm through path 26.5 dBm terminated path
  • Single positive supply: 3 V to 5 V
  • CMOS-/TTL-compatible control
  • All off state control
  • 8-lead mini small outline package with exposed pad (MINI_SO_EP)

Applications

AI Translation
  • Cellular/4G infrastructure
  • Wireless infrastructure
  • Mobile radios
  • Test equipment