Infineon/CYPRESS FM28V100-TGTR

The FM28V100 is a 128 Kx8 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM28V100 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by chip enable or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM28V100 ideal for nonvolatile memory applications requiring frequent or rapid writes. The device is available in a 32-pin TSOP I surface mount package. Device specifications are guaranteed over the industrial temperature range -40 ℃ to +85 ℃.

• 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 Kx8
• High-endurance 100 trillion (10¹⁴) read/writes
• 151-year data retention
• NoDelay writes
• Page mode operation to 30 ns cycle time
• Advanced high-reliability ferroelectric process
• SRAM compatible
• Industry-standard 128 Kx8 SRAM pinout
• 60-ns access time, 90-ns cycle time
• Superior to battery-backed SRAM modules
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Low power consumption
• Active current 7 mA (typ)
• Standby current 90 μA (typ)
• Low-voltage operation: VDD = 2.0 V to 3.6 V
• Industrial temperature: -40 ℃ to +85 ℃
• 32-pin thin small outline package (TSOP) Type I
• Restriction of hazardous substances (RoHS) compliant