ADI ADR440ARMZ-REEL7

The ADR440/ADR441/ADR443/ADR444/ADR445 series XFET voltage references feature ultralow noise, high accuracy, and low temperature drift. By employing temperature drift curvature correction technology combined with the externally applied field-effect transistor (XFET) technique, the nonlinearity of the ADR440/ADR441/ADR443/ADR444/ADR445 output voltage versus temperature is minimized. The noise performance of XFET voltage references surpasses that of buried zener voltage references, while requiring a smaller supply voltage headroom (500 mV). This combination of characteristics makes the ADR440/ADR441/ADR443/ADR444/ADR445 series ideally suited for precision signal conversion in high-end data acquisition systems, optical networks, and medical applications. The ADR440/ADR441/ADR443/ADR444/ADR445 series provides a source current output of up to 10 mA and a sink current capability of up to −5 mA. It also features a trim pin that allows the output voltage to be adjusted within a ±0.5% range without degrading performance.

• Ultra-low noise (0.1 Hz to 70 Hz)
  • ADR440: 1 µV p-p
  • ADR441: 1.2 µV p-p
  • ADR443: 1.4 µV p-p
  • ADR444: 1.8 µV p-p
  • ADR445: 2.25 µV p-p
• Excellent temperature coefficient
  • Grade A: 10 ppm/°C
  • Grade B: 3 ppm/°C
• Low dropout operation (supply headroom): 500 mV
• Input range: (Vout + 500 mV) to 18 V
• High output source and sink currents: +10 mA and -5 mA
• Wide operating temperature range: -40°C to +125°C

• Precision data acquisition systems
• High-resolution data converters
• Battery-powered instrumentation
• Portable medical instruments
• Industrial process control systems
• Precision instrumentation
• Optical control circuits