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DIODES DMN32D0LFB4-7BRoHS

Manufacturer
DIODES
MPN
DMN32D0LFB4-7B
LCSC Part #
C6540237
Packaging
X2-DFN1006-3
Customer #
Key Attributes
30V 440mA 1.2V 350mW 1.2Ω@4V 1 N-channel X2-DFN1006-3 Single FETs, MOSFETs RoHS
Datasheetpdf iconDIODES DMN32D0LFB4-7B
In-Stock: 70
70 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.0648$ 0.32
50+$ 0.0634$ 3.17
150+$ 0.0624$ 9.36
500+$ 0.0614$ 30.70
Standard Packaging10000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingX2-DFN1006-3
Drain to Source Voltage30V
Current - Continuous Drain(Id)440mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)1.2Ω@4V
Number1 N-channel
Input Capacitance(Ciss)44.8pF
Gate Charge(Qg)600pC@4.5V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging10000
Sales UnitPiece

Introduction

AI Translation

This MOSFET is designed to minimize on-resistance RDS(ON) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • N-channel MOSFET
  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage current
  • Ultra-small surface mount package
  • Fully lead-free and RoHS compliant
  • Halogen and antimony-free, "Green" device

Applications

AI Translation
  • Load Switch