DIODES DMN3009LFV-7
| Manufacturer | |
| MPN | DMN3009LFV-7 |
| LCSC Part # | C6540228 |
| Packaging | PowerDI3333-8 |
| Customer # | |
| Key Attributes | 30V 60A 3V 2W 5.5mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 42nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low R<sub>DS(ON)</sub> — minimizes conduction losses
- Compact, thermally efficient package enables higher-density end products
- Occupies only 33% of the board area of an SO-8 package, enabling smaller end products
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free "green" device
Applications
AI Translation
- Backlight Illumination - Power Management Function - DC-DC Converter
In-Stock: 70
70 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5872 | $ 0.59 |
| 10+ | $ 0.5742 | $ 5.74 |
| 30+ | $ 0.5661 | $ 16.98 |
| 100+ | $ 0.558 | $ 55.80 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 42nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low R<sub>DS(ON)</sub> — minimizes conduction losses
- Compact, thermally efficient package enables higher-density end products
- Occupies only 33% of the board area of an SO-8 package, enabling smaller end products
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free "green" device
Applications
AI Translation
- Backlight Illumination - Power Management Function - DC-DC Converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



